Dielectric constants of amorphous hafnium aluminates: First-principles study

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 19, 2007, Pages

  Momida, Hiroyoshi ^a   Hamada, Tomoyuki ^b,c   Takagi, Yoshiteru ^c   Yamamoto, Takenori ^d   Uda, Tsuyoshi ^d   Ohno, Takahisa ^a,c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b HITACHI LTD   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^d ADVANCESOFT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34347364643     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.195105     Document Type: Article

References (62)

1. A. I. Kingon, J.-P. Maria, and S. K. Streiffer, Nature (London) NATUAS 0028-0836 10.1038/35023243 406, 1032 (2000).
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1361065 89, 5243 (2001).
3. J. Robertson, Eur. Phys. J.: Appl. Phys. EPAPFV 1286-0042 10.1051/epjap:2004206 28, 265 (2004).
4. W. J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, and T. P. Ma, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2002.805000 23, 649 (2002).
5. M.-Y. Ho, H. Gong, G. D. Wilk, B. W. Busch, M. L. Green, W. H. Lin, A. See, S. K. Lahiri, M. E. Loomans, P. I. Räisänen, and T. Gustafsson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1522826 81, 4218 (2002).
6. G. D. Wilk, M. L. Green, M.-Y. Ho, B. W. Busch, T. W. Sorsch, F. P. Klemens, B. Brijs, R. B. van Dover, A. Kornblit, T. Gustafsson, E. Garfunkel, S. Hillenius, D. Monroe, P. Kalavade, and J. M. Hergenrother, in 2002 Symposium on VLSI Technology Digest of Technical Papers, (IEEE Electron Device Society, Japan Soc. Appl. Phys., Honolulu, 2002), pp. 88-89.
7. M. Koyama, Y. Kamimuta, M. Koike, M. Suzuki, and A. Nishiyama, in Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials (SSDM 2003) (The Japan Society of Applied Physics, Tokyo, 2003), pp. 48-49;
8. Y. Tamura, Y. Sugiyama, M. Yamaguchi, H. Minakata, Y. Tanida, T. Sakoda, M. Nakamura, and Y. Nara, ibid., pp. 54 and 55.
9. M. Koyama, Y. Kamimuta, M. Koike, M. Suzuki, and A. Nishiyama, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.43.1788 43, 1788 (2004).
10. M. Koyama, Y. Kamimuta, M. Koike, T. Ino, and A. Nishiyama, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.44.2311 44, 2311 (2005).
11. N. V. Nguyen, S. Sayan, I. Levin, J. R. Ehrstein, I. J. R. Baumvol, C. Driemeier, C. Krug, L. Wielunski, P. Y. Hung, and A. Diebold, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.2091096 23, 1706 (2005).
12. V. V. Afanas'ev, A. Stesmans, and W. Tsai, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1532550 82, 245 (2003).
13. K. Tomida, K. Kita, and A. Toriumi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2355471 89, 142902 (2006).
14. H. Takeuchi and T.-J. King, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1594829 83, 788 (2003).
15. N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, and T. Arikado, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1899232 86, 143507 (2005).
16. H. Momida, T. Hamada, T. Yamamoto, T. Uda, N. Umezawa, T. Chikyow, K. Shiraishi, and T. Ohno, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2184991 88, 112903 (2006).
17. H. Momida, T. Yamamoto, T. Hamada, Y. Takagi, T. Uda, and T. Ohno, Trans. Mater. Res. Soc. Jpn. TMRJE3 1382-3469 30, 889 (2005).
18. H. Momida, T. Hamada, Y. Takagi, T. Yamamoto, T. Uda, and T. Ohno, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.73.054108 73, 054108 (2006).
19. S. D. Bond, B. J. Leimkuhler, and B. B. Laird, J. Comput. Phys. JCTPAH 0021-9991 10.1006/jcph.1998.6171 151, 114 (1999).
20. I. Souza and J. L. Martins, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.55.8733 55, 8733 (1997).
21. E. Hernández, J. Chem. Phys. JCPSA6 0021-9606 10.1063/1.1416867 115, 10282 (2001).
22. M. Matsui, Phys. Chem. Miner. PCMIDU 0342-1791 23, 345 (1996).
23. T. Yamasaki (private communication);
24. C. Kaneta, Y. Kosaka, and T. Yamasaki, in Semiconductor Technology (ISTC2002), Proceedings of the Second International Conference on Semiconductor Technology, edited by, M. Yang, (The Electrochemical Society, New Jersey, 2002), pp. 262-271.
25. G. Gutiérrez and B. Johansson, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.104202 65, 104202 (2002).
26. X. Zhao, D. Ceresoli, and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.085107 71, 085107 (2005).
27. D. Vanderbilt, X. Zhao, and D. Ceresoli, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2004.11.232 486, 125 (2005).
28. D. Ceresoli and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.74.125108 74, 125108 (2006).
29. M. Ikeda, G. Kresse, T. Nabatame, and A. Toriumi, Mater. Sci. MSCJDS 0137-1339 10.1007/BF00723316 23, 401 (2005).
30. K. Vollmayr, W. Kob, and K. Binder, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54.15808 54, 15808 (1996).
31. P. F. McMillan, Nature (London) NATUAS 0028-0836 10.1038/430738a 430, 738 (2004);
32. A. Rosenflanz, M. Frey, B. Endres, T. Anderson, E. Richards, and C. Schardt, Nature (London) NATUAS 0028-0836 10.1038/nature02729 430, 761 (2004);
33. C. M. Jantzen, R. P. Krepski, and H. Herman, Mater. Res. Bull. MRBUAC 0025-5408 10.1016/0025-5408(80)90036-7 15, 1313 (1980).
34. P. Hohenberg and W. Kohn, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.136.B864 136, B864 (1964).
35. W. Kohn and L. J. Sham, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.140. A1133 140, A1133 (1965).
36. D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.41.7892 41, R7892 (1990).
37. J. P. Perdew and Y. Wang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.45.13244 45, 13244 (1992).
38. CIAO, PHASE, and UVSOR, Institute of Industrial Science, University of Tokyo (http://www.fsis.iis.u-tokyo.ac.jp/en/).
39. T. Yamamoto, H. Momida, T. Hamada, T. Uda, and T. Ohno, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2004.11.240 486, 136 (2005).
40. G.-M. Rignanese, F. Detraux, X. Gonze, A. Bongiorno, and A. Pasquarello, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.89.117601 89, 117601 (2002).
41. S. A. Shevlin, A. Curioni, and W. Andreoni, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.94.146401 94, 146401 (2005).
42. G.-M. Rignanese, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/17/7/R03 17, R357 (2005).
43. X. Zhao and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.233106 65, 233106 (2002).
44. G.-M. Rignanese, X. Gonze, G. Jun, K. Cho, and A. Pasquarello, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.184301 69, 184301 (2004).
45. See, for example, G. Harbeke, in Optical Properties of Solids, edited by, F. Abelès, (North-Holland, Amsterdam, 1972), pp. 21-92;
46. A. F. Starace, Phys. Rev. A PLRAAN 1050-2947 10.1103/PhysRevA.3.1242 3, 1242 (1971).
47. H. Kageshima and K. Shiraishi, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.56.14985 56, 14985 (1997).
48. R. D. King-Smith and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.47.1651 47, R1651 (1993).
49. R. Resta, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.66.899 66, 899 (1994).
50. S.-M. Lee, D. G. Cahill, and T. H. Allen, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.253 52, 253 (1995).
51. Y. Oka, T. Takahashi, K. Okada, and S. Iwai, J. Non-Cryst. Solids JNCSBJ 0022-3093 10.1016/0022-3093(79)90172-8 30, 349 (1979).
52. R. Manaila, A. Dévényi, and E. Candet, Thin Solid Films THSFAP 0040-6090 10.1016/0040-6090(84)90451-6 116, 289 (1984).
53. P. Lamparter and R. Kniep, Physica B PHYBE3 0921-4526 234-236, 405 (1997).
54. R. L. Puurunen, A. Delabie, S. V. Elshocht, M. Caymax, M. L. Green, B. Brijs, O. Richard, H. Bender, T. Conard, I. Hoflijk, W. Vandervorst, D. Hellin, D. Vanhaeren, C. Zhao, S. D. Gendt, and M. Heyns, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1866219 86, 073116 (2005).
55. A. Uedono, N. Hattori, A. Ogura, J. Kudo, S. Nishikawa, T. Ohdaira, R. Suzuki, and T. Mikado, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.43.1254 43, 1254 (2004).
56. A. Uedono, M. Goto, K. Higuchi, K. Shiraishi, K. Yamabe, H. Kitajima, R. Mitsuhashi, A. Horiuchi, K. Torii, T. Arikado, R. Suzuki, T. Ohdaira, and K. Yamada, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.43.7848 43, 7848 (2004).
57. I. Hirosawa, H. Kitajima, and K. Torii, Trans. Mater. Res. Soc. Jpn. TMRJE3 1382-3469 30, 221 (2005).
58. E. P. Gusev, E. Cartier, D. A. Buchanan, M. Gribelyuk, M. Copel, H. Okorn-Schmidt, and C. D'Emic, Microelectron. Eng. MIENEF 0167-9317 10.1016/S0167-9317(01)00667-0 59, 341 (2001).
59. K. S. Shamala, L. C. S. Murthy, and K. N. Rao, Mater. Sci. Eng., B MSBTEK 0921-5107 10.1016/j.mseb.2003.09.036 106, 269 (2004).
60. S. Miyazaki, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1418405 19, 2212 (2001).
61. H. Takeuchi, D. Ha, and T.-J. King, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1705593 22, 1337 (2004).
62. H. Momida, T. Hamada, and T. Ohno, Jpn. J. Appl. Phys. JJAPA5 0021-4922 (to be published).