Scaling limits of hafnium-silicate films for gate-dielectric applications

Applied Physics Letters

Volumn 83, Issue 4, 2003, Pages 788-790

  Takeuchi, Hideki ^a   King, Tsu Jae ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTING SILICON;

HAFNIUM-SILICATE FILMS;

HAFNIUM;

EID: 0041511849     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1594829     Document Type: Article

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