Cubic-HfN formation in Hf-based high-k gate dielectrics with N incorporation and its impact on electrical properties of films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2311-2315

  Koyama, Masato ^a   Kamimuta, Yuuichi ^a   Koike, Masahiro ^a   Ino, Tsunehiro ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Cubic HfN; HfAlON; HfO2; HfON; HfSiON; High k; Nitrogen incorporation

Indexed keywords

ANNEALING; CHEMICAL ACTIVATION; CHEMICAL BONDS; DECOMPOSITION; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; PHASE SEPARATION;

CUBIC HFN; HFALON; HFO2; HFON; HFSION; HIGH K; NITROGEN INCORPORATION;

HAFNIUM COMPOUNDS;

EID: 21244446210     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2311     Document Type: Conference Paper

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