Characterization of Hf0.3Al0.7Ox fabricated by atomic-layer-deposition technique using monoenergetic positron beams

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7848-7852

  Uedono, Akira ^a,b   Goto, Masakazu ^a   Higuchi, Keiichi ^a   Shiraishi, Kenji ^a,b   Yamabe, Kikuo ^a,b   Kitajima, Hiroshi ^c   Mitsuhashi, Riichiro ^c   Horiuchi, Atsushi ^c   Torii, Kazuyoshi ^c   Arikado, Tsunetoshi ^c   Suzuki, Ryoichi ^d   Ohdaira, Toshiyuki ^d   Yamada, Keisaku ^b,e  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^e WASEDA UNIVERSITY   (Japan)

Author keywords

Defect; HfAIOx; High k; Monoenergetic positron beam; Positron annihilation

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CMOS INTEGRATED CIRCUITS; CRYSTAL GROWTH; DIELECTRIC MATERIALS; DOPPLER EFFECT; ELECTRON TRAPS; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; POSITRON ANNIHILATION SPECTROSCOPY;

HFALOX; HIGH-K; MONOENERGETIC POSITRON BEAM; POSITRON ANNIHILATION;

HAFNIUM COMPOUNDS;

EID: 19944432293     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7848     Document Type: Conference Paper

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