Characterizing metal-oxide semiconductor structures consisting of HfSiOx as gate dielectrics using monoenergetic positron beams

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 A, 2004, Pages 1254-1259

  Uedono, Akira ^a   Hattori, Nobuyoshi ^b   Ogura, Atsushi ^b   Kudo, Jun ^b   Nishikawa, Satoshi ^b   Ohdaira, Toshiyuki ^c   Suzuki, Ryoichi ^c   Mikado, Tomohisa ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Semiconduct Technol Acad Res C   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Defect; High k; Ion implantation; MOS; Open space; Positron annihilation

Indexed keywords

AMORPHOUS SILICON; ANNEALING; DIELECTRIC MATERIALS; DIFFUSION; DOPPLER EFFECT; GRAIN BOUNDARIES; HEAT TREATMENT; ION IMPLANTATION; LEAKAGE CURRENTS; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; SHRINKAGE; SUBSTRATES; THERMODYNAMIC STABILITY; VAPOR DEPOSITION;

MONOENERGETIC POSITRON BEAMS; OPEN SPACE; POSITRON ENERGY; THERMAL ANNEALING;

MOS DEVICES;

EID: 3042705814     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1254     Document Type: Article

References (35)

1. The International Technology Roadmap for Semiconductors (International Sematch, Austin TX, 2003) 2003 ed.
2. G. D. Wilk, R. M. Wallace and J. M. Anthony: J. Appl. Phys. 89 (2001) 5243.
3. G. D. Wilk, R. M. Wallace and J. M. Anthony: J. Appl. Phys. 87 (2000) 484.
4. D. A. Neumayer and E. Cartier: J. Appl. Phys. 90 (2001) 1801.
5. B. H. Lee, L. Kang, R. Nieh, W.-J. Qi and J. C. Lee: Appl. Phys. Lett. 76 (2000) 1926.
6. H. Kang, Y. Roh, G. Bae, D. Jung and C.-W. Yang: J. Vac. Sci. Technol. B 20 (2002) 1360.
7. M. A. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, M. J. Bevan and L. Colombo: Appl. Phys. Lett. 81 (2002) 1074.
8. R. Krause-Rehberg and H. S. Leipner: Positron Annihilation in Semiconductors (Springer-Verlag, Berlin, 1999) Solid-State Sciences 127.
9. Y. Zhi and A. Chen: J. Phys. Condens. Matter 5 (1993) 1877.
10. C. Q. Tang: Phys. Rev. B 50 (1994) 9774.
11. D. J. Keeble, B. Nielsen, A. Krishnan, K. G. Lynn, S. Madhukar, R. Ramesh and C. F. Yong: Appl. Phys. Lett. 73 (1998) 318.
12. T. Friessnegg, S. Madhukar, B. Nielsen, A. R. Moodenbaugh, S. Aggarwal, D. J. Keeble, E. H. Poindexter, P. Mascher and R. Ramesh: Phys. Rev. B 59 (1999) 13365.
13. A. Uedono, K. Shimoyama, M. Kiyohara, Z. Q. Chen, K. Yamabe, R. Suzuki, T. Ohdaira and T. Mikado: J. Appl. Phys. 91 (2001) 5307.
14. P. Asoka-Kumar, K. G. Lynn and D. O. Welch: J. Appl. Phys. 76 (1994) 4935.
15. A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado and Y. Ohji: J. Appl. Phys. 75 (1994) 3822.
16. H. Kauppinen, C. Corbel, L. Liszkay, T. Laine, J. Oila, K. Saarinen, P. Hautojärvi, M.-F. Barthe and G. Blondiaux: J. Phys. Condens. Matter 9 (1997) 10595.
17. Y. Uehara, K. Kawase, J. Tsuchimoto and T. Shibano: Technical Report of IEICE 71 (2003) 53.
18. A. van Veen, H. Schut, J. de Vries, R. A. Hakvoort and M. R. Ijpma: AIP Conf. Proc. 218 (1990) 171.
19. R. Suzuki, T. Ohdaira and T. Mikado: Radiat. Phys. Chem. 58 (2000) 603.
20. P. Kirkegaard, M. Eldrup, O. E. Mogensen and N. J. Pedersen: Comput. Phys. Commun. 23 (1981) 307.
21. S.-P. Jeng, T.-P. Ma, R. Canteri, M. Anderle and G. W. Rubloff: Appl. Phys. Lett. 61 (1992) 1310.
22. A. Uedono, T. Kitano, M. Watanabe, T. Moriya, N. Komuro, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T. Mikado: Jpn. J. Appl. Phys. 36 (1997) 969.
23. A. Uedono, T. Kitano, K. Hamada, T. Moriya, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T. Mikado: Jpn. J. Appl. Phys. 36 (1997) 2571.
24. A. Uedono, T. Kawano, S. Tanigawa, A. Urano, M. Kyoto and H. Itoh: J. Phys. Condens. Matter 7 (1995) 5139.
25. W. B. Blumenthal: The Chemical Behavior of Zirconium (Van Nostrand, Princeton, 1958) p. 201.
26. L. Bragg, C. F. Claringbull and W. H. Taylor: Crystal Structures of Minerals (Cornell University Press, Ithaca, 1965) p. 185.
27. T. E. M. Staab, R. Krause-Rehberg, B. Vetter and B. Kieback: J. Phys. Condens. Matter 11 (1999) 1757.
28. R. Würschum, E Shapiro, R Dittmar and H. E. Schaefer: Phys. Rev. B 62 (2000) 12021.
29. S. Dannefaer, T. Friessnegg and D. Kerr: Phys. Rev. B 54 (1996) 15051.
30. J. Kuriplach, W. Anwand, G. Brauer and W. Skorupa: Appl. Surf. Sci. 194 (2002) 84.
31. V. J. Ghosh, B. Nielsen and T. Friessnegg: Phys. Rev. B 61 (2000) 207.
32. A. Uedono, R. Mitsuhashi, A. Horiuchi, K. Torii, K. Yamabe, K. Yamada, R. Suzuki, T. Ohdaira and T. Mikado: Ext. Abstr. of Int. Workshop on Gate Insulator 2003 (Busines Center for Academic Societies Japan, Tokyo, 2003) p. 120.
33. A. Uedono, T. Kitano, M. Watanabe, T. Moriya, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T. Mikado: Jpn. J. Appl. Phys 35 (1996) 2000.
34. V. E. Henrich: Mat. Res. Soc. Symp. Proc. 567 (1999) 435.
35. M. Otani, K. Shiraishi and A. Oshiyama: Phys. Rev. Lett. 90 (2003) 75901.