High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Cha, S N ^a   Jang, J E ^a   Choi, Y ^a   Amaratunga, G A J ^a   Ho, G W ^a   Welland, M E ^a   Hasko, D G ^b   Kang, D J ^c,d   Kim, J M ^e  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Sungkyunkwan University   (South Korea)

^d Sungkyunkwan University   (South Korea)

^e Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); LOGIC CIRCUITS; NANOSTRUCTURED MATERIALS; TRANSCONDUCTANCE; ZINC OXIDE;

FIELD EFFECT MOBILITY; GATE ELECTRODES; SUSPENDED NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 33846076659     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2416249     Document Type: Article

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