High performance ZnO nanowire field effect transistor

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 217-220

  Cha, S N ^a   Jang, J E ^a   Choi, Y ^a   Ho, G W ^a   Kang, D J ^a,b   Hasko, D G ^c   Welland, M E ^a   Amaratunga, G A J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Sungkyunkwan University   (South Korea)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHY; NANOSTRUCTURED MATERIALS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; ZINC OXIDE;

SUBTHRESHOLD SLOPE; SUBTHRESHOLD SWING; ZNO NANOWIRE FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 33751400017     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546624     Document Type: Conference Paper

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