Characteristics and thermal stability of ruthenium/p-GaAs Schottky contacts

Semiconductor Science and Technology

Volumn 14, Issue 12, 1999, Pages 1080-1083

  Wagener, M C ^a   Botha, J R ^a   Leitch, A W R ^a  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FERMI LEVEL; RUTHENIUM; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

INTERFACIAL ANTISITE DEFECTS;

SCHOTTKY BARRIER DIODES;

EID: 0033329576     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/12/312     Document Type: Article

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