SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 461-466

Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer

(3) Kampen, T U a Park, S a Zahn, D R T a

a CHEMNITZ UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

Ag GaAs(100); Au n GaAs diode; PTCDA

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SILVER; SUBSTRATES; THIN FILMS;

SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0037042112 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00919-9 Document Type: Conference Paper

Times cited : (133)

References (21)

1
- 3743067479
- (1965) Phys. Rev. A , vol.138 , pp. 1689
- Heine, V.¹

2
- 5844355552
- (1987) Phys. Rev. Lett. , vol.58 , pp. 1260
- Mönch, W.¹

3
- 0029343053
- (1995) Surf. Sci. , vol.331-333 , pp. 490
- Kampen, T.U.¹ Mönch, W.²

4
- 0034624790
- (2000) Nature , vol.404 , pp. 166
- Vilan, A.¹ Shanzer, A.² Cahen, D.³

5
- 0001316590
- (1985) J. Appl. Phys. , vol.58 , pp. 867
- Forrest, S.R.¹ Kaplan, M.L.² Schmidt, P.H.³ Parsey J.M., Jr.⁴

6
- 0021386710
- (1984) J. Appl. Phys. , vol.55 , pp. 1492
- Forrest, S.R.¹ Kaplan, M.L.² Schmidt, P.H.³

7
- 0001174145
- (2000) Chem. Phys. Lett. , vol.327 , pp. 181
- Hill, I.G.¹ Kahn, A.² Soos, Z.G.³ Pascal R.A., Jr.⁴

8
- 36449002708
- (1995) Appl. Phys. Lett. , vol.66 , pp. 944
- Hirose, Y.¹ Forrest, S.R.² Kahn, A.³

9
- 18144432832
- (2001) Appl. Surf. Sci. , vol.175-176 , pp. 326
- Kampen, T.U.¹ Salvan, G.² Tenne, D.³ Zahn, D.R.T.⁴

10
- 0021500842
- (1984) J. Appl. Phys. , vol.58 , pp. 1888
- Lakhani, A.¹

11
- 0030109454
- (1996) Appl. Phys. A , vol.62 , pp. 241
- Ding, S.A.¹ Hsu, C.C.²

12
- 0000640092
- (1999) J. Appl. Phys. , vol.86 , pp. 7146
- Akatsu, T.¹ Plößl, A.² Stenzel, H.³ Gösele, U.⁴

13
- 1442296029
- (1999) J. Vac. Sci. Technol. A , vol.17 , pp. 823
- Elamrawi, K.A.¹ Elsayed, H.E.²

14
- 0028441150
- (1994) Jpn. J. Appl. Phys. , vol.33
- Yamada, M.¹ Die, Y.²

15
- 33750830673
- (1994) Appl. Phys. Lett. , vol.64 , Issue.25 , pp. 3425
- Li, Z.S.¹ Cai, W.Z.² Su, R.Z.³ Dong, G.S.⁴ Huang, D.M.⁵ Ding, X.M.⁶ Hou, X.Y.⁷ Wang, X.⁸

16
- 84919286987
- (1994) J. Vac. Sci. Technol. A , vol.12 , pp. 1848
- Pashley, M.D.¹ Li, D.²

17
- 0000775935
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 2616
- Hirose, Y.¹ Chen, W.² Haskal, E.I.³ Forrest, S.R.⁴ Kahn, A.⁵

18
- 0003546026
- Clarendon Press, Oxford
- (1988) Metal-Semiconductor Contacts, 2nd Edition
- Rhoderick, E.H.¹ Williams, R.H.²

19
- 0034187953
- (2000) Vacuum , vol.57 , pp. 139
- Zahn, D.R.T.¹ Kampen, T.U.² Hohenecker, St.³ Braun, W.⁴

20
- 0032686763
- (1999) Appl. Surf. Sci. , vol.142 , pp. 28
- Hohenecker, St.¹ Kampen, T.U.² Werninghaus, T.³ Zahn, D.R.T.⁴ Braun, W.⁵

21
- 0035905241
- (2001) Appl. Phys. Lett. , vol.79 , pp. 4124
- Park, S.¹ Kampen, T.U.² Zahn, D.R.T.³ Braun, W.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.