Evaluation of the perfection of the Pd-Inp Schottky interface from the energy viewpoint of hydrogen adsorbates

Semiconductor Science and Technology

Volumn 19, Issue 1, 2004, Pages 39-44

  Chen, Huey Ing ^a   Chou, Yen I ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTROLESS PLATING; ENTHALPY; FERMI LEVEL; GAS ADSORPTION; GIBBS FREE ENERGY; HYDROGEN; INTERFACES (MATERIALS); MOS DEVICES; PALLADIUM; SEMICONDUCTING INDIUM PHOSPHIDE; THERMIONIC EMISSION;

SCHOTTKY BARRIER HEIGHT; THERMAL EVAPORATION;

SCHOTTKY BARRIER DIODES;

EID: 0345866741     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/1/006     Document Type: Article

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