Temperature-dependent optical absorption measurements and Schottky contact behavior in layered semiconductor n-type InSe(:Sn)

Applied Surface Science

Volumn 253, Issue 8, 2007, Pages 3899-3905

  Duman, S ^a   Gurbulak, B ^a   Turut, A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneity; InSe; Layered semiconductors; Metal semiconductor metal contacts; Schottky barrier height; The absorption measurements

Indexed keywords

LIGHT ABSORPTION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SINGLE CRYSTALS;

ABSORPTION MEASUREMENTS; BARRIER INHOMOGENEITY; LAYERED SEMICONDUCTORS; METAL-SEMICONDUCTOR-METAL CONTACTS; SCHOTTKY BARRIER HEIGHTS;

SEMICONDUCTOR DEVICES;

EID: 33846600386     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.08.018     Document Type: Article

References (53)

1. Rhoderick E.H., and Williams R.H. Metal-semiconductor Contacts. second ed. (1988), Clarendon, Oxford
2. Sze S.M. Physics of Semiconductor Devices. second ed. (1981), Willey, New York
3. Shik A., Ruda H.E., Pelinovsky D., and Craig W. J. Phys. D: Appl. Phys. 35 (2002) 2988
4. Takahashi A., Minoura N., and Karube I. Thin Solid Films 485 5 (2005) 184
5. Vasiliev R.B., Ryabova L.I., Rumyantseva M.N., and Gaskov A.M. Uspekhi Khimii (Russ Chem Rev) 73 10 (2004) 939
6. Han S.Y., Choi K.J., Lee J.L., Mun J.K., Park M., and Kim H. J. Vac. Sci. Technol. B 21 5 (2003) 2133
7. Morimoto T. IEEE Trans. Electron. Dev. 42 (1995) 915
8. Huang S.H., Tian Y., and Lu F. Appl. Surf. Sci. 234 1-4 (2004) 362
9. Özdemir A.F., Türüt A., and Kökçe A. Semicond. Sci. Technol. 21 3 (2006) 298
10. Chand S., and Kumar J. Semicond. Sci.Technol. 11 (1996) 1203
11. Chand S., and Kumar J. Appl. Phys. A, Mater. Sci. Process. 65 (1997) 171
12. Song Y.P., Van Meirhaeghe R.L., Laflére W.H., and Cardon F. Solid-State Electron. 29 (1986) 633
13. Werner J.H., and Gu{combining double acute accent}ttler H.H. J. Appl. Phys. 69 (1991) 1522
14. Chand S., and Kumar J. Semicond. Sci. Technol. 10 (1995) 1680
15. Chand S., and Bala S. Appl. Surf. Sci. 252 (2005) 358
16. Osvald J., and Horvath Z.J. Appl. Surf. Sci. 234 1-4 (2004) 349-354
17. Karataş S., Alti{dotless}ndal S., Türüt A., and Özmen A. Appl. Surface Sci. 217 (2003) 250
18. Dobrocka E., and Osvald J. Appl. Phys. Lett. 65 (1994) 575
19. Jones F.E., Wood B.P., Myers J.A., Daniels C.H., and Lonergan M.C. J. Appl. Phys. 86 (1999) 6431
20. Jones F.E., and Lonergan M.C. J. Chem. Phys. 115 1 (2001) 433
21. Gümüş A., Türüt A., and Yalçi{dotless}n N. J. Appl. Phys. 91 (2002) 245
22. von Wenckstern H., Biehne G., Rahman R.A., Hochmuth H., Lorenz M., and Grundmann M. Appl. Phys. Lett. 88 9 (2006) 092102
23. De Blasi C., Micocci G., Mongelli S., and Tepore A. J. Cryst. Growth 57 (1982) 482
24. Hirohata A., Moodera J.S., and Berera G.P. Thin Solid Films 510 (2006) 247
25. Gibson G.A., Chaiken A., Nauka K., Yang C.C., Davidson R., Holden A., Bicknell R., Yeh B.S., Chen J., Liao H., Subramanian S., Schult D., Jasinski J., and Liliental-Weber Z. Appl. Phys. Lett. 86 (2005) 051902
26. Shigetomi S., and Ikari T. J. Appl. Phys. 88 (2000) 1520
27. J.F. Sánchez-Royo, A. Segura, J. Pellicer-Porres and A. Chevy, Surf. Sci., In Press, Corrected Proof, Available online 17 April 2006.
28. Abay B., Onganer Y., Saǧlam M., Efeoǧlu H., Türüt A., and Yoǧurtçu Y.K. Solid-State Electron. 41 (1997) 924
29. Ates A., Yi{dotless}ldi{dotless}ri{dotless}m M., and Gurbulak B. Opt. Mater. 28 (2006) 488
30. Tagiev B.G., Niftiev G.M., and Aidaev F.Sn. Phys. Status Solidi A 89 (1985) 639
31. Segure A., Mari B., Martinez-Pastor J., and Chevy A. Phys. Rev. B 43 (1991) 4953
32. Segure A., Guesdon J.P., Besson J.M., and Chevy A. J. Appl. Phys. 54 (1983) 876
33. Gürbulak B. Phys. Status Solidi (a) 2 (2001) 349
34. Ateş A., Gürbulak B., Yi{dotless}ldi{dotless}ri{dotless}m M., and Tüzemen S. Czech. J. Phys. 54 (2004) 377
35. Riede V., Neumann H., Levy F., and Sobotta H. Phys. Status Solidi B 109 (1982) 275
36. Gürbulak B., Yi{dotless}ldi{dotless}ri{dotless}m M., Ateş A., Doǧan S., and Yoǧurtçu Y.K. Jpn. J. Appl. Phys. 38 (1999) 5133
37. Shigetomi S., and Ikari T. Jpn. J. Appl. Phys. 41 (2002) 5565
38. Ateş A., Gürbulak B., Yi{dotless}ldi{dotless}ri{dotless}m M., and Doǧan S. Physica E 16 (2003) 274
39. Franz W. Z. Naturforsch A 13 (1958) 484
40. Keldysh L.V. Zh. Eksp. Teor. Fiz. 34 (1958) 1138
41. Karataş S., and Alti{dotless}ndal S. Mater. Sci. Eng.: B 122 2 (2005) 133
42. Tung R.T. Mater. Sci. Eng. R 35 (2001) 1-138
43. Vanalme G.M., Goubert L., Van Meirhaeghe R.L., Cardon F., and van Daele P. Semicond. Sci. Technol. 14 (1999) 871
44. Vanalme G.M., Van Meirhaeghe R.L., Cardon F., and van Daele P. Semicond. Sci. Technol. 12 (1997) 907
45. Horváth Zs.J. Solid-State Electron. 39 (1996) 176
46. Ayyildiz E., Cetin H., and Horvath Zs.J. Appl. Surf. Sci. 252 (2005) 1153
47. Horvath Zs.J., Rakovics V., Szentpali B., Püpoki S., and Zdansky K. Vacuum 71 (2003) 113
48. Biber M., Cakar M., and Turut A. J. Mater. Sci-Mater. Electron. 12 (2001) 575
49. Ebeoǧlu M.A., Temurtaş F.T., and Öztürk Z.Z. Solid-State Electron. 42 (1998) 23
50. Roberts A.R.V., and Evans D.A. Appl. Phys. Lett. 86 (2005) 072105
51. Kampen T.U., Park S., and Zahn D.R.T. Appl. Surf. Sci. 190 (2002) 461
52. Kampen T., Schuller A., Zahn D.R.T., Biel B., Ortega J., Perez R., and Flores F. Appl. Surf. Sci. 234 1-4 (2004) 341
53. Horvath Zs.J. SPIE proc. 1783 (1992) 453