High-barrier height Sn/p-Si Schottky diodes with interfacial layer by anodization process

Applied Surface Science

Volumn 172, Issue 1-2, 2001, Pages 1-7

  Temircl, C ^a   Bati, B ^a   Saglam M ^b   Turut A ^b  

^a YUZUNCU YIL UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; ELECTRIC CONTACTS; EVAPORATION; EXTRAPOLATION; INTERFACES (MATERIALS); SEMICONDUCTING TIN COMPOUNDS;

DE-IONIZED WATERS; METAL-SEMICONDUCTOR CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0035281899     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00760-1     Document Type: Article

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