Crystal growth of GaN on (0 0 0 1) face by HVPE-atomistic scale simulation

Journal of Crystal Growth

Volumn 303, Issue 1 SPEC. ISS., 2007, Pages 37-43

  Kempisty, Paweł ^a   Krukowski, Stanisław ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

A1. Density functional theory; A1. Gallium nitride; A1. Hydride vapor phase epitaxy

Indexed keywords

COMPUTER SIMULATION; DENSITY FUNCTIONAL THEORY; GALLIUM NITRIDE; MATHEMATICAL MODELS; REACTION RATES; TRANSPORT PROPERTIES; VAPOR PHASE EPITAXY;

HYDROGEN VAPOR PHASE EPITAXY (HVPE); MODELING OF TRANSPORT; SIMULTANEOUS REACTIONS; SURFACE REACTION RATES;

CRYSTAL GROWTH;

EID: 34147153415     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.057     Document Type: Article

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