Structure and energetics of nitride surfaces under MOCVD growth conditions

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 8-13

  Van de Walle, Chris G ^a,b,c   Neugebauer, J ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A1. Computer simulation; A1. Growth models; A1. Surface structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

AMMONIA; COMPUTER SIMULATION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE DIAGRAMS; SURFACE STRUCTURE;

GROWTH MODELS;

CRYSTAL GROWTH;

EID: 0037292170     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01868-7     Document Type: Conference Paper

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