Thermodynamics on halide vapor-phase epitaxy of InN using InCl and InCl3

Journal of Crystal Growth

Volumn 222, Issue 1-2, 2001, Pages 118-124

  Kumagai, Yoshinao ^a   Takemoto, Kikurou ^b   Koukitu, Akinori ^a   Seki, Hisashi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; NITRIDES; PARTIAL PRESSURE; SEMICONDUCTOR GROWTH; THERMODYNAMICS; VAPOR PHASE EPITAXY;

INDIUM CHLORIDE; INDIUM NITRIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035157269     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00932-5     Document Type: Article

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