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Journal of Crystal Growth

Volumn 231, Issue 1-2, 2001, Pages 57-67

Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1-xN using GaCl3 and InCl3

(5) Kumagai, Yoshinao a Takemoto, Kikurou b Hasegawa, Takahiro c Koukitu, Akinori a Seki, Hisashi a

a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)

b SUMITOMO ELECTRIC INDUSTRIES LTD (Japan)

c SHIZUOKA UNIVERSITY (Japan)

Author keywords

A1. Thermodynamic analysis; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CHLORINE COMPOUNDS; GALLIUM NITRIDE; PARTIAL PRESSURE; THERMOANALYSIS; THERMODYNAMICS; VAPOR DEPOSITION;

TRI-HALIDE VAPOR PHASE EPITAXY (THVPE);

VAPOR PHASE EPITAXY;

EID: 0035452339 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01453-1 Document Type: Article

Times cited : (43)

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