Indium versus hydrogen-terminated GaN(0001) surfaces: Surfactant effect of indium in a chemical vapor deposition environment

Applied Physics Letters

Volumn 84, Issue 21, 2004, Pages 4322-4324

  Northrup, John E ^a   Van De Walle, Chris G ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POTENTIAL; LATERALLY CONTRACTED BILAYERS (LCB); SEGREGATION ENERGY; SURFACE MIGRATION;

CHEMICAL BONDS; CHEMICAL REACTORS; FREE ENERGY; HYDROGEN; HYDROGENATION; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PASSIVATION; PROBABILITY DENSITY FUNCTION; SURFACE ACTIVE AGENTS; SURFACE CHEMISTRY; SURFACE STRUCTURE; THERMODYNAMICS;

GALLIUM NITRIDE;

EID: 2942650831     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1757020     Document Type: Article

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