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Journal of the Electrochemical Society

Volumn 154, Issue 5, 2007, Pages

Performance of AlGaAsInGaAsGaAs pseudomorphic high electron mobility transistor as a function of temperature

(2) Lin, Yu Shyan a Chen, Bo Yuan a

a NATIONAL DONG HWA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC BREAKDOWN; MICROFABRICATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

DRAIN CURRENT DENSITY (ID); TEMPERATURE COEFFICIENT; TRANSISTOR CHARACTERISTICS; WAFER MEASUREMENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34047097316 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2714318 Document Type: Article

Times cited : (16)

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