Impact of 20-MeV α-ray irradiation on the V-band performance of AlGaAs Pseudomorphic HEMTs

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2546-2550

  Ohyama, H ^a   Yajima, K ^b   Simoen, E ^c   Katoh, T ^b   Claeys, C ^d   Takami, Y ^e   Kobayashi, K ^a   Yoneoka, M ^a   Nakabayashi, M ^a   Hakata, T ^a   Takizawa, H ^f  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e RIKKYO UNIVERSITY   (Japan)

^f JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL DEFECTS; ELECTRON SCATTERING; GAMMA RAYS; HIGH ELECTRON MOBILITY TRANSISTORS; IRRADIATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE;

ALUMINUM GALLIUM ARSENIDE; CHANNEL ELECTRONS; GAMMA RAY IRRADIATION;

RADIATION DAMAGE;

EID: 0034450521     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903806     Document Type: Conference Paper

References (15)

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14. Damage correlations in semiconductors exposed to gamma, electron and proton radiations
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