Mobility enhancement and breakdown behavior in InP-based heterostmcture field-effect transistor

Journal of the Electrochemical Society

Volumn 152, Issue 8, 2005, Pages

  Lin, Yu Shyan ^a   Huang, Jr Hung ^a  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC BREAKDOWN; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES;

ELECTRON GAS CONCENTRATION; INP CHANNELS; MOBILITY ENHANCEMENT;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 25644452701     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1938008     Document Type: Article

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