Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor

Applied Physics Letters

Volumn 83, Issue 26, 2003, Pages 5545-5547

  Lin, Y S ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ENERGY GAP; ETCHING; IONIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

BAND-TO-BAND TUNNELING; COMPOSITE COLLECTOR DESIGN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0942288626     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1637147     Document Type: Article

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