Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices

Volumn 49, Issue 3, 2002, Pages 354-360

  Jo, Seong June ^b   Kim, Jeong Hoon ^b   Song, Jong In ^a,b  

^a Kwangju Institute of Science and Technology ^*

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Compound source molecular beam epitaxy (MBE); Critical layer thickness; Highly strained InGaAs channel; InGaP InGaAs psuedomorphic high electron mobility transistors (pHEMTs); Microwave characteristics; Noise characteristics; Patterned substrate growth

Indexed keywords

MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSCONDUCTANCE;

CRITICAL LAYER THICKNESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036494510     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.987103     Document Type: Article

References (15)

1. 1510 mS/mm 0.1 μm gate length pseudomorphic HEMTs with intrinsic current gain cutoff frequency of 220 GHz
2. 0.7 As/GaAs HEMT
3. Defects associated with the accommodation of misfit between crystals
4. Role of misfit dislocations on pseudomorphic high electron mobility transistors
5. 0.71As heterostructures
6. -2) and unstrained epilayers
7. 1-x As epilayers grown on GaAs substrates
8. 0.67As metamorphic HEMTs on GaAs
9. T over 200 GHz
10. Accommodation of misfit across the interface between crystals of semiconducting elements of compounds
11. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction of growth area
12. Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy
13. Highly strained InGaP/InGaAs p-HEMT using reduced area growth
14. Trap studies in InGaP/GaAs and AlGaAs/GaAs HEMTs by means of low-frequency noise and transconductance dispersion characterizations
15. Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy