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Volumn 75, Issue 11, 1999, Pages 1616-1618

High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; COMPUTATIONAL METHODS; CRYSTAL GROWTH; ETCHING; HETEROJUNCTIONS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

EID: 0032613434     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124772     Document Type: Article
Times cited : (18)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.