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Volumn 75, Issue 11, 1999, Pages 1616-1618
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High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
CARRIER MOBILITY;
COMPUTATIONAL METHODS;
CRYSTAL GROWTH;
ETCHING;
HETEROJUNCTIONS;
LATTICE CONSTANTS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
TRANSCONDUCTANCE;
GATE VOLTAGE SWING (GVS);
HIGH TURN-ON VOLTAGES;
SCHOTTKY BARRIERS;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0032613434
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.124772 Document Type: Article |
Times cited : (18)
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References (10)
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