Physical models for strained and relaxed GaInAs alloys: Band structure and low-field transport

Solid-State Electronics

Volumn 41, Issue 8, 1997, Pages 1139-1152

  Kopf Ch ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

STRAINED LAYER HETEROEPITAXY;

SEMICONDUCTOR DEVICE MODELS;

EID: 0031207878     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00051-8     Document Type: Article

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