Improved temperature-dependent characteristics of a sulfur-passivated AlGaAsInGaAsGaAs pseudomorphic high-electron-mobility transistor

Journal of the Electrochemical Society

Volumn 153, Issue 7, 2006, Pages

  Lai, Po Hsien ^a   Fu, Ssu I ^a   Tsai, Yan Ying ^a   Hung, Ching Wen ^a   Yen, Chih Hung ^a   Chuang, Hung Ming ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MICROWAVES; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR; REVERSE LEAKAGE CURRENT; SULFUR PASSIVATION; TEMPERATURE-DEPENDENT CHARACTERISTICS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33744804028     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2199433     Document Type: Article

References (21)

1. W. C. Hsu, H. M. Shieh, C. L. Wu, and T. S. Wu, IEEE Trans. Electron Devices, ED-41, 456 (1994).
2. W. S. Lour, M. K. Tsai, K. C. Chen, Y. W. Wu, S. W. Tan, and Y. J. Yang, Semicond. Sci. Technol., 16, 826 (2001).
3. M. K. Hsu, H. R. Chen, S. W. Tan, T. S. Lin, and W. S. Lour, Conference on Optoelectronic and Microelectronic Materials and Devices, p. 133 (2004).
4. H. Mizuta, K. Yamaguchi, M. Yamane, T. Tanoue, and S. Takahashi, IEEE Trans. Electron Devices, ED-36, 2307 (1989).
5. Y. Dong, X. M. Ding, X. Y. Hou, Y. Li, and X. B. Li, Appl. Phys. Lett., 77, 3839 (2000).
6. P. H. Lai, C. W. Chen, C. I. Kao, S. I. Fu, Y. Y. Tsai, C. W. Hung, C. H. Yen, H. M. Chuang, S. Y. Cheng, and W. C. Liu, IEEE Trans. Electron Devices, ED-53, 1 (2006).
7. N. Okamoto, N. Hara, and H. Tanaka, IEEE Trans. Electron Devices, ED-47, 2284 (2000).
8. K. Remashan and K. N. Bhat, IEEE Trans. Electron Devices, ED-49, 343 (2002).
9. M. R. Ravi, A. DasGupta, and N. DasGupta, IEEE Trans. Electron Devices, ED-50, 532 (2003).
10. H. Ohno, H. Kawanishi, Y. Akagi, Y. Nakajima, and T. Hijikata, Jpn. J. Appl. Phys., Part 1, 29, 2473 (1990).
11. H. Oigawa, J. Fan, Y. Nannichi, H. Sugahara, and M. Oshima, Jpn. J. Appl. Phys., Part 2, 30, L322 (1991).
12. C. T. Lee, M. H. Lan, and C. D. Tsai, Solid-State Electron., 41, 1715 (1997).
13. Z. H. Lu, M. J. Graham, X. H. Feng, and B. X. Yang, Appl. Phys. Lett., 62, 2932 (1993).
14. J. Fan, Y. Kurata, and Y. Nannichi, Jpn. J. Appl. Phys., Part 2, 28, L2255 (1989).
15. J. W. Seo, T. Koker, S. Agarwala, and I. Adesida, Appl. Phys. Lett., 60, 1114 (1992).
16. P. Collot, S. Delalande, and J. Olivier, Electron. Lett., EL-35, 506 (1999).
17. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., p. 341, John Wiley & Sons, New York (1990).
18. E. J. Meijer, G. H. Gelinck, E. van Veenendaal, B. H. Huisman, D. M. de Leeuw, and T. M. Klapwijk, Appl. Phys. Lett., 82, 4576 (2003).
19. N. Yoshida, M. Totsuka, J. Ino, and S. Matsumoto, Jpn. J. Appl. Phys., Part 1, 33, 1248 (1994).
20. C. R. Moon, B. D. Choe, S. D. Kwon, and H. Lim, J. Appl. Phys., 81, 2904 (1997).
21. R. Hakimi and M. C. Amann, Semicond. Sci. Technol., 12, 778 (1997).