A GaAs/AlAs wet selective etch process for the gate recess of GaAs power metal-semiconductor field-effect transistors

Journal of the Electrochemical Society

Volumn 148, Issue 1, 2001, Pages

  Chang, E Y ^a,c   Lai, Yeong Lin ^a,b   Lee, Y S ^a,b   Chen, S H ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c Microelectronics and Information System Research Center   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE RECESS;

CODE DIVISION MULTIPLE ACCESS; ELECTRIC BREAKDOWN; ETCHING; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

MESFET DEVICES;

EID: 0035123409     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1344555     Document Type: Article

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