Temperature-dependent characteristics of InGaP/InGaAs/GaAs high-electron mobility transistor measured between 77 and 470 K

Journal of the Electrochemical Society

Volumn 152, Issue 10, 2005, Pages

  Lin, Yu Shyan ^a   Hsieh, Yu Lung ^a  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; VOLTAGE CONTROL;

TWO-TERMINAL GATE-SOURCE BREAKDOWN; WIDE-RANGE TEMPERATURE-DEPENDENT BREAKDOWN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 27644452242     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2013167     Document Type: Article

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