A novel InGaP/InGaAs/GaAs double δ-doped pHEMT with camel-like gate structure

IEEE Electron Device Letters

Volumn 24, Issue 1, 2003, Pages 1-3

  Tsai, Jung Hui ^a  

^a NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

Author keywords

Camel gate; Gate voltage swing; InGaP InGaAs GaAs; pHEMT; Turn on voltage

Indexed keywords

AMPLIFIERS (ELECTRONIC); CIRCUIT OSCILLATIONS; CURRENT DENSITY; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CAMEL GATE STRUCTURE; GATE VOLTAGE SWING; LARGE SIGNAL AMPLIFIERS; OSCILLATION FREQUENCY; SATURATION CURRENT DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037251072     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807024     Document Type: Letter

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