The design of a new spiking neuron using dual work function silicon nanowire transistors

Nanotechnology

Volumn 18, Issue 9, 2007, Pages

  Bindal, Ahmet ^a   Hamedi Hagh, Sotoudeh ^a  

^a SAN JOSE STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POWER UTILIZATION; ENERGY DISSIPATION; NANOWIRES; SILICON; THRESHOLD VOLTAGE; TRANSISTORS;

DESIGN CYCLES; NEURON CELLS; NEURON CIRCUITS; TRANSIENT PERFORMANCE;

NEURONS;

NANOWIRE; SILICON;

ARTICLE; CELL CYCLE; ELECTRIC POTENTIAL; GEOMETRY; NERVE CELL; PRIORITY JOURNAL; SEMICONDUCTOR; SPIKE;

EID: 33947507102     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/9/095201     Document Type: Article

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