Single-crystal nanowire transistor for logic and memory applications

2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

Volumn , Issue , 2005, Pages 232-235

  Yu, B ^a   Ye, L ^a   Meyyappan, M ^a  

^a NASA AMES RESEARCH CENTER   (United States)

Author keywords

Logic; Memory; Nanotechnology; Nanowire; Semiconductor

Indexed keywords

DATA STORAGE EQUIPMENT; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SEMICONDUCTOR MATERIALS; SILICON; SINGLE CRYSTALS;

LOGIC; MEMORY; NANOWIRE; SEMICONDUCTOR;

TRANSISTORS;

EID: 32044462305     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. ITRS Roadmap, 2003 version.
2. B. Yu, et al, "Scaling FinFET to 10nm gate length," Proc., International Electron Device Meeting, 937-939, San Francisco, December 2002.
3. F.-L. Yang, et al, "5nm-gate nanowire FinFET," Symposium VLSI Technology, 196-197, Honolulu, 2004.
4. S.-W. Chung, et al, "Silicon nanowire devices," Applied Physics Letters, 76, 15, 2068-2070, 2000.
5. J.-Y. Yu, et al, "Silicon nanowires: preparation, device fabrication, and transport properties," J. Phys. Chem, B, 104, 11864-11870, 2000.
6. Y. Cui, et al, "Doping and electrical transport in silicon nanowires," J. Phys. Chem. B, 104, 5213-5216, 2000.
7. Y. Cui, et al, "Functional nanoscale electronic devices assembled using silicon nanowire building blocks," Science, 291, 851-853, 2001.
8. Y. Huang, et al., "Logic gates and computation form assembled nanowire building blocks," Science, 294, 1313-1317, 2001.
9. G. Gu, et al., "Growth and electrical transport of germanium nanowires," J. Applied Physics, 90, 11, 5747-5751, 2001.
10. S. Takeda, et al, "Formation mechanism of nanocatalysts for the growth of silicon nanowires on a hydrogen-terminated Si {111} surface template," Applied Physics Letters, 82, 6, 979-981, 2003.
11. Y. Cui, et al, "High performance silicon nanowire field effect transistors," Nano Letters, 3, 2, 149-152, 2003.
12. T. I. Kamins, et al, "Growth and structure of chemically vapor deposited Ge nanowires on Si substrates," Nano Letters, 4, 3, 503-506, 2004.