Containing the finite size effect in copper lines

Semiconductor International

Volumn 29, Issue 5, 2006, Pages 38-42

  Reid, Jonathan ^a   Sukamto, John ^a   Alers, Glenn ^a   Park, Seyang ^a   Harm, Greg ^a  

^a Novellus Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33846163817     PISSN: 01633767     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (12)

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2. G. Steinlesberger et al., "Electrical Assessment of Copper Damascene Interconnects Down to Sub-50 nm Feature Sizes," Microelectron. Eng., 2002, Vol. 64, p. 409.
3. W. Steinhögl, G. Schindler, G. Steinlesberger, M. Traving and M. Engelhardt, "Comprehensive Study of the Resistivity of Copper Wires With Lateral Dimensions of 100 nm and Smaller," J. App. Phys., 2005, Vol. 97, p. 023706.
4. G.B. Alers et al., "Barrier-First Integration For Improved Reliability in Copper Dual Damascence Interconnects," IEEE Intl. Int. Tech. Conf., 2003, p 27.
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7. J.H. Sukamto and J.D. Reid, "Impact of Bath Composition on the Purity and Room Temperature Anneal Characteristics of Thin Copper Film," Proc. 2004th Elec. Chem. Soc., 2004.
8. S.H. Brongersma et al., "Copper Grain Growth in Reduced Dimensions," IEEE Intl. Tech. Conf., 2004, p. 48.
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10. A.F. Mayadas and M. Shatzkes, Phys. Rev. B 1, 1970, p. 1382.
11. S.M. Rossnagel and T.S. Kuan, J. Vac. Sci. Tech. B22, 2004, p. 240.
12. N.S. Nagaraj, "Impact of Copper Resistance Scaling: A Design Perspective," Sematech/Novellus Wkshp. on Copper Resistivity, June 2005.