Physical and electrical characterizations of ultrathin Si-rich Hf-silicate film and Hf-silicate/SiO2 bilayer deposited by atomic layer chemical vapor deposition

Journal of Applied Physics

Volumn 100, Issue 4, 2006, Pages

  Kim, Jaehyun ^a   Yong, Kijung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; SILICATES;

ELECTRICAL CHARACTERIZATIONS; HF-SILICATE FILMS; HF-SILICATE LAYERS;

ULTRATHIN FILMS;

EID: 33748299126     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234823     Document Type: Article

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