Electrical properties of 0.5 nm thick Hf-silicate top-layer HfO2 gate dielectrics by atomic layer deposition

Applied Physics Letters

Volumn 86, Issue 22, 2005, Pages 1-3

  Kamiyama, Satoshi ^a   Miura, Takayoshi ^a   Nara, Yasuo ^a   Arikado, Tsunetoshi ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; DIELECTRIC MATERIALS; ELECTRODEPOSITION; ELECTROMAGNETIC WAVE POLARIZATION; FERROELECTRIC MATERIALS; HAFNIUM COMPOUNDS; KRYPTON; LEAKAGE CURRENTS; X RAY ANALYSIS;

ATOMIC LAYER DEPOSITION (ALD; ATOMIC PERCENT; ELECTRIC POLARIZATION; STRUCTURAL PHASE TRANSITION;

SILICATES;

EID: 20844454482     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1941455     Document Type: Article

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