Ultrathin zirconium silicate gate dielectrics with compositional gradation formed by self-organized reactions

Applied Physics Letters

Volumn 81, Issue 22, 2002, Pages 4221-4223

  Watanabe, Heiji ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; OXIDATION; PERMITTIVITY; ULTRATHIN FILMS;

GATE DIELECTRICS; SELF-ORGANIZED REACTIONS;

ZIRCONIUM COMPOUNDS;

EID: 0037175938     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1525392     Document Type: Article

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