Silicon micromachining of high aspect ratio, high-density through-wafer electrical interconnects for 3-D multichip packaging

IEEE Transactions on Advanced Packaging

Volumn 29, Issue 3, 2006, Pages 615-622

  Wang, Zheyao ^a,b   Wang, Lianwei ^c   Nguyen, N T ^d   Wien, Wim A H ^a   Schellevis, Hugo ^a   Sarro, Pasqualina M ^a   Burghartz, Joachim N ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b TSINGHUA UNIVERSITY   (China)

^c EAST CHINA NORMAL UNIVERSITY   (China)

^d HANOI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Viet Nam)

Author keywords

Copper electroplating; Deep reactive ion etching(DRIE); Interconnect; Packaging; Tetra methyl ammonium hydroxide (TMAH); Through wafer

Indexed keywords

ASPECT RATIO; COPPER; ELECTRONICS PACKAGING; ELECTROPLATING; MICROMACHINING; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

COPPER ELECTROPLATING; TETRA METHYL AMMONIUM HYDROXIDE; THROUGH-WAFER ELECTRICAL INTERCONNECTS;

MULTICHIP MODULES;

EID: 33747617361     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2005.853552     Document Type: Article

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