High aspect ratio through-wafer interconnections for 3D-microsystems

Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2003, Pages 634-637

  Wang, L ^a   Nichelatti, A ^a   Schellevis, H ^a   De Boer, C ^a   Visser, C ^a   Nguyen, T N ^b   Sarro, P M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b HANOI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; COPPER; DRY ETCHING; ELECTROCHEMISTRY; ELECTRONICS PACKAGING; ELECTROPLATING; ION IMPLANTATION; POROUS SILICON; REACTIVE ION ETCHING; SILICON NITRIDE; SILICON WAFERS;

HIGH ASPECT RATIO STRUCTURE; MACROPOROUS SILICON; WAFER THINNING;

MICROELECTROMECHANICAL DEVICES;

EID: 0038493949     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. A. Rahman et al, "Wire-length distribution of three-dimensional integrated circuits", Proceedings of IEEE Int. Conf. on Interconnect Technology", pp.233-235, 1999.
2. V.Lehmann, "The physics of macroporous silicon formation inlow doped n-type porous silicon", J.Electrochem.Soc., Vol.140,(1993) pp. 2836 - 2843.
3. H. Ohji, "Macroporous Si based micromachining", Ph.D. thesis, 2002, Delft, The Netherlands, ISBN 90-5166-90.
4. P.A.Kohl, "Photoelectrochemical etching of semiconductors", (1997) IBM research
5. L.Wang, C.C.G. Visser, C. de Boer, M. Laros, W. van der Vlist, J. Groeneweg, G.Craciun and P.M. Sarro, "Thinning of Micromachined wafers for high density through wafer interconnects", Proceeding of SAFE2002, Veldhoven, 2002, the Netherlands
6. N.T.Nguyen etal: "Through-wafer copper electroplating for 3-D interconnects" Proceedings of MME 2001, Cork-Ireland, M.Hill & B.Lane Eds., 16-18 Sept 2001, pp. 74-77.