Membrane covered electrically isolated through-wafer via holes

Journal of Micromechanics and Microengineering

Volumn 11, Issue 4, 2001, Pages 344-347

  Rosen D ^a   Olsson, J ^a   Hedlund, C ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; MEMBRANES; REACTIVE ION ETCHING; SILICON WAFERS;

SILICON ETCHING;

WSI CIRCUITS;

EID: 0035396389     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/11/4/310     Document Type: Article

References (15)

1. Damascene copper electroplating for chip interconnections
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3. Ultra-low resistance, through-wafer via (TWV) technology and its applications in three-dimensional structures on silicon
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5. Bulk micromachining of silicon
6. Deep anisotropic etching of silicon
7. Microhollow cathode discharges
8. High-pressure hollow cathode discharges
9. Bosch deep silicon etching: Improving uniformity and etch rate for advanced MEMS applications
10. Characterization of a time multiplexed inductively coupled plasma etcher
11. TM process
12. On the origin of the notching effect during etching in uniform high density plasmas
13. Notching as an example of charging in uniform high density plasmas
14. The electron charging effects of plasma on notch profile defects