Physical properties of highly conformal TiN thin films grown by atomic layer deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 3, 2003, Pages 1375-1379

  Kim, Jaebum ^a   Hong, Hyunseok ^a   Ghosh, Subhankar ^a   Oh, Ki Young ^b   Lee, Chongmu ^a  

^a Inha University   (South Korea)

^b Jusung Engineering Company Limited   (South Korea)

Author keywords

AES; ALD; Aspect ratio; Resistivity; Step coverage; TiN

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DEPOSITION; MOLECULAR ORIENTATION; POLYCRYSTALLINE MATERIALS; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD);

THIN FILMS;

EID: 0037504231     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1375     Document Type: Article

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