Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Won, Youngdo ^a   Park, Sangwook ^a   Koo, Jaehyoung ^a   Kim, Seokhoon ^a   Kim, Jinwoo ^a   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL BONDS; DEPOSITION; MATHEMATICAL MODELS; PROBABILITY DENSITY FUNCTION; SILICATES; SILICON; SUBSTRATES; THIN FILMS;

DENSITY FUNCTIONAL THEORY; MODEL REACTIONS; REMOTE PLASMA ATOMIC LAYER DEPOSITION (RPALD) METHOD; SILICATE FORMATION;

HAFNIUM COMPOUNDS;

EID: 29744434535     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2150250     Document Type: Article

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