Impact of the High Vertical Electric Field on Low-Frequency Noise in Thin-Gate Oxide MOSFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2520-2527

  Mercha, A ^a   Simoen, Eddy ^a   Claeys, Cor ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

1 f noise; Floating body; Kink effect; Noise overshoot; Quantum effect; Tunneling current

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; LEAKAGE CURRENTS; POISSON EQUATION; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; TRANSISTORS;

FLOATING BODY; KINK EFFECT; NOISE OVERSHOOT; QUANTUM EFFECTS; TUNNELING CURRENTS; ULTRATHIN GATE OXIDES;

MOSFET DEVICES;

EID: 0347338037     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.820121     Document Type: Article

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