Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics

Solid-State Electronics

Volumn 48, Issue 12, 2004, Pages 2271-2275

  Von Haartman, M ^a   Wu, D ^a   Malm, B G ^a   Hellstrom P E ^a   Zhang, S L ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

1 f noise; High ; Low frequency noise; MOSFET; SiGe

Indexed keywords

AMPLIFIERS (ELECTRONIC); DIELECTRIC MATERIALS; HIGH RESOLUTION ELECTRON MICROSCOPY; IMAGE ANALYSIS; MOSFET DEVICES; SPURIOUS SIGNAL NOISE; THICKNESS MEASUREMENT;

1/F NOISE; LOW-FREQUENCY NOISE; SIGE;

SILICON COMPOUNDS;

EID: 4544282093     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.056     Document Type: Article

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