Fully silicided metal gates for high-performance CMOS technology: A review

Journal of the Electrochemical Society

Volumn 152, Issue 7, 2005, Pages

  Maszara, W P ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); MOS DEVICES; NICKEL COMPOUNDS; POLYSILICON; SEMICONDUCTOR MATERIALS; TRANSISTORS;

FULL SILICIDATION (FUSI); HIGH-PERFORMANCE CMOS TECHNOLOGY; METAL GATES; POLYSILICON GATE ELECTRODES;

CMOS INTEGRATED CIRCUITS;

EID: 23744433409     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1924307     Document Type: Review

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