Modeling and simulation of a nanoscale three-region tri-material gate stack (TRIMGAS) MOSFET for improved carrier transport efficiency and reduced hot-electron effects

IEEE Transactions on Electron Devices

Volumn 53, Issue 7, 2006, Pages 1623-1633

  Goel, Kirti ^a   Saxena, Manoj ^b   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

ATLAS device simulation software; Gate leakage current; Gate stack; Hot electron effects; Short channel effects (SCEs)

Indexed keywords

BOUNDARY CONDITIONS; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; THRESHOLD VOLTAGE;

CARRIER TRANSPORT EFFICIENCY; GATE STACK; REDUCED HOT-ELECTRON EFFECTS; SHORT-CHANNEL EFFECTS; TRI-MATERIAL GATE STACK;

MOSFET DEVICES;

EID: 33745728899     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.876272     Document Type: Article

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