Straddle gate transistors: High Ion/Ioff transistors at short gate lengths

Annual Device Research Conference Digest

Volumn , Issue , 1999, Pages 26-27

  Tiwari, Sandip ^a   Welser, J J ^a   Kumar, Arvind ^a   Cohen, S ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; THRESHOLD VOLTAGE;

GATE MODULATION;

GATES (TRANSISTOR);

EID: 0033365278     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (2)