Physics-based analytical modeling of potential and electrical field distribution in dual material gate (DMG)-MOSFET for improved hot electron effect and carrier transport efficiency

IEEE Transactions on Electron Devices

Volumn 49, Issue 11, 2002, Pages 1928-1938

  Saxena, Manoj ^a   Haldar, Subhasis ^b   Gupta, Mridula ^c   Gupta, R S ^c  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

^c UNIVERSITY OF DELHI   (India)

Author keywords

Carrier transport efficiency; Dual material gate offset voltage; Work function

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRONS; GATES (TRANSISTOR); OPTIMIZATION;

HOT ELECTRONS;

MOSFET DEVICES;

EID: 0036867746     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.804701     Document Type: Article

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