Molecular beam epitaxy growth of indium nitride films on c-face zinc oxide substrates

Journal of Crystal Growth

Volumn 292, Issue 1, 2006, Pages 33-39

  Ohgaki, Takeshi ^a,b   Ohashi, Naoki ^a   Haneda, Hajime ^a   Yasumori, Atsuo ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

A1. Substrates; A3. Molecular beam epitaxy; B1. Nitride; B2. Semiconducting III V materials

Indexed keywords

CELLS; CRYSTALS; MOLECULAR BEAM EPITAXY; NITRIDES; PLASMAS; REACTION KINETICS; SUBSTRATES; SURFACE CHEMISTRY; ZINC COMPOUNDS;

CRYSTALLINE FILMS; HETEROEPITAXIAL GROWTH; PLASMA CELL; SEMICONDUCTING MATERIALS;

INDIUM COMPOUNDS;

EID: 33745672765     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.03.056     Document Type: Article

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