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Volumn 209, Issue 4, 2000, Pages 816-821
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MBE growth of high-quality ZnO films on epi-GaN
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
MOLECULAR BEAM EPITAXY;
OSCILLATIONS;
PHOTOLUMINESCENCE;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR GROWTH;
ZINC OXIDE;
DEEP-LEVEL EMISSION;
RADIO FREQUENCY PLASMA ASSISTED MOLECULAR BEAM EPITAXY (MBE);
SEMICONDUCTING FILMS;
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EID: 0343627966
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00726-5 Document Type: Article |
Times cited : (118)
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References (10)
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