Characterization of zinc oxide single crystals for epitaxial wafer applications

Materials Research Society Symposium - Proceedings

Volumn 799, Issue , 2003, Pages 255-260

  Ohashi, Naoki ^a   Ohgaki, Takeshi ^a   Sugimura, Shigeaki ^a,b   Maeda, Katsurtd ^b   Sakaguchi, Isao ^a   Ryoken, Haruki ^a,c   Niikura, Ikuo ^b   Sato, Mitsuru ^b   Haneda, Hajime ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Tokyo Denpa Co Ltd   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; CRYSTAL DEFECTS; EPITAXIAL GROWTH; HALL EFFECT; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS;

BULK CRYSTALS; FLUX METHOD; GROWTH DIRECTIONS;

ZINC OXIDE;

EID: 3042681769     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-799-z5.40     Document Type: Conference Paper

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