Optical properties of heavily aluminum-doped zinc oxide thin films prepared by molecular beam epitaxy

Key Engineering Materials

Volumn 248, Issue , 2003, Pages 91-94

  Ohgaki, Takeshi ^a   Kawamura, Yuji ^b   Kuroda, Takashi ^b   Ohashi, Naoki ^a   Adachi, Yutaka ^a   Tsurumi, Takaaki ^b   Minami, Fujio ^b   Haneda, Hajime ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Aluminum; Molecular beam epitaxy and optical properties; Thin film; Zinc oxide

Indexed keywords

ABSORPTION SPECTROSCOPY; ALUMINUM; ENERGY GAP; HALL EFFECT; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

BAND EDGE EMISSION; CRYSTALLINITY; WIDE DIRECT BAND GAP;

ZINC OXIDE;

EID: 0042823445     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/kem.248.91     Document Type: Article

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