Structural pattern formation in titanium-nickel contacts on silicon carbide following high-temperature annealing

Semiconductor Science and Technology

Volumn 21, Issue 7, 2006, Pages 898-905

  Nikitina, I P ^a,d   Vassilevski, K V ^a   Horsfall, A B ^a   Wright, N G ^a   O'Neill, A G ^a   Johnson, C M ^b   Yamamoto, T ^c   Malhan, R K ^c  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c DENSO CORPORATION   (Japan)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; NICKEL; RAPID THERMAL ANNEALING; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY;

METAL DEPOSITION SEQUENCES; SIC SUBSTRATE; STRUCTURAL PATTERN FORMATION; TITANIUM-NICKEL CONTACTS;

SOLID STATE PHYSICS;

EID: 33745288179     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/7/013     Document Type: Article

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